Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studies

S. R.C. Pinto; A. G. Rolo; A. Chahboun; Maja Buljan; A. Khodorov; R. J. Kashtiban; U. Bangert; N. P. Barradas; E. Alves; S. Bernstorff; M. J.M. Gomes

doi:10.1016/j.mee.2010.06.002

Multilayers of Ge nanocrystals embedded in Al₂O₃ matrix: Structural and electrical studies

S. R.C. Pinto, A. G. Rolo, A. Chahboun, Maja Buljan, A. Khodorov, R. J. Kashtiban, U. Bangert, N. P. Barradas, E. Alves, S. Bernstorff, M. J.M. Gomes

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, Ge/Al₂O₃ multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 °C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing incidence small angles X-ray scattering technique demonstrates the formation of Ge nanoclusters formed between alumina layers. Room temperature I-V measurements showed weak carrier trapping in the system. This was explained by the leakage caused by Ge diffusion through the multilayer.

Original language	English
Pages (from-to)	2508-2512
Number of pages	5
Journal	Microelectronic Engineering
Volume	87
Issue number	12
DOIs	https://doi.org/10.1016/j.mee.2010.06.002
Publication status	Published - Dec 2010
Externally published	Yes

Keywords

Electrical measures
GISAXS
Ge nanocrystals
Laser ablation deposition
RBS
TEM

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10.1016/j.mee.2010.06.002

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title = "Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studies",

abstract = "In this paper, Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 °C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing incidence small angles X-ray scattering technique demonstrates the formation of Ge nanoclusters formed between alumina layers. Room temperature I-V measurements showed weak carrier trapping in the system. This was explained by the leakage caused by Ge diffusion through the multilayer.",

keywords = "Electrical measures, GISAXS, Ge nanocrystals, Laser ablation deposition, RBS, TEM",

author = "Pinto, \{S. R.C.\} and Rolo, \{A. G.\} and A. Chahboun and Maja Buljan and A. Khodorov and Kashtiban, \{R. J.\} and U. Bangert and Barradas, \{N. P.\} and E. Alves and S. Bernstorff and Gomes, \{M. J.M.\}",

year = "2010",

month = dec,

doi = "10.1016/j.mee.2010.06.002",

language = "English",

volume = "87",

pages = "2508--2512",

journal = "Microelectronic Engineering",

issn = "0167-9317",

number = "12",

}

TY - JOUR

T1 - Multilayers of Ge nanocrystals embedded in Al2O3 matrix

T2 - Structural and electrical studies

AU - Pinto, S. R.C.

AU - Rolo, A. G.

AU - Chahboun, A.

AU - Buljan, Maja

AU - Khodorov, A.

AU - Kashtiban, R. J.

AU - Bangert, U.

AU - Barradas, N. P.

AU - Alves, E.

AU - Bernstorff, S.

AU - Gomes, M. J.M.

PY - 2010/12

Y1 - 2010/12

N2 - In this paper, Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 °C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing incidence small angles X-ray scattering technique demonstrates the formation of Ge nanoclusters formed between alumina layers. Room temperature I-V measurements showed weak carrier trapping in the system. This was explained by the leakage caused by Ge diffusion through the multilayer.

AB - In this paper, Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 °C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing incidence small angles X-ray scattering technique demonstrates the formation of Ge nanoclusters formed between alumina layers. Room temperature I-V measurements showed weak carrier trapping in the system. This was explained by the leakage caused by Ge diffusion through the multilayer.

KW - Electrical measures

KW - GISAXS

KW - Ge nanocrystals

KW - Laser ablation deposition

KW - RBS

KW - TEM

UR - https://www.scopus.com/pages/publications/77956266647

U2 - 10.1016/j.mee.2010.06.002

DO - 10.1016/j.mee.2010.06.002

M3 - Article

AN - SCOPUS:77956266647

SN - 0167-9317

VL - 87

SP - 2508

EP - 2512

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 12

ER -

Multilayers of Ge nanocrystals embedded in Al₂O₃ matrix: Structural and electrical studies

Abstract

Keywords

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