Abstract
The nitrogen dimer as both a fundamental building unit in designing a new type of nitrides, and a material gene associated with high electrical and thermal conductivities is investigated by first principles calculations. The results indicate that the predicted SiN4 is structurally stable and reasonably energy-favored with a striking feature in its band structure that exhibits free electron-like energy dispersions. It possesses a high electrical conductivity (5.07×105 S/cm) and a high thermal conductivity (371W/mK) comparable to copper. The validity is tested by isostructural AlN4 and SiC4. It is demonstrated that the nitrogen dimers can supply a high density of delocalized electrons in this new type of nitrides.
| Original language | English |
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| Article number | 087102 |
| Journal | Chinese Physics Letters |
| Volume | 35 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - Aug 2018 |
| Externally published | Yes |