TY - JOUR
T1 - On turbulent flows in cold-wall CVD reactors
AU - Van Santen, Helmar
AU - Kleijn, Chris R.
AU - Van Den Akker, Harry E.A.
PY - 2000
Y1 - 2000
N2 - With the increase in diameter of the wafers and the tendency to increase operating pressure of chemical vapor deposition reactors, the flow in these reactors may turn turbulent as a result of buoyancy. The effect of turbulence on the CVD process in a single wafer reactor has been studied numerically with large eddy simulations. It is found that the free-convection induced turbulence increases the heat flux, whereas the conditions are uniform in a large part of the reactor as a result of turbulent mixing, in principle offering the possibilities for a high, uniform deposition rate.
AB - With the increase in diameter of the wafers and the tendency to increase operating pressure of chemical vapor deposition reactors, the flow in these reactors may turn turbulent as a result of buoyancy. The effect of turbulence on the CVD process in a single wafer reactor has been studied numerically with large eddy simulations. It is found that the free-convection induced turbulence increases the heat flux, whereas the conditions are uniform in a large part of the reactor as a result of turbulent mixing, in principle offering the possibilities for a high, uniform deposition rate.
UR - http://www.scopus.com/inward/record.url?scp=0033745301&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(00)00033-6
DO - 10.1016/S0022-0248(00)00033-6
M3 - Article
AN - SCOPUS:0033745301
SN - 0022-0248
VL - 212
SP - 299
EP - 310
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -