Abstract
With the increase in diameter of the wafers and the tendency to increase operating pressure of chemical vapor deposition reactors, the flow in these reactors may turn turbulent as a result of buoyancy. The effect of turbulence on the CVD process in a single wafer reactor has been studied numerically with large eddy simulations. It is found that the free-convection induced turbulence increases the heat flux, whereas the conditions are uniform in a large part of the reactor as a result of turbulent mixing, in principle offering the possibilities for a high, uniform deposition rate.
| Original language | English |
|---|---|
| Pages (from-to) | 299-310 |
| Number of pages | 12 |
| Journal | Journal of Crystal Growth |
| Volume | 212 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2000 |
| Externally published | Yes |
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