TY - JOUR
T1 - One-Step Fabrication of GeSn Branched Nanowires
AU - Doherty, Jessica
AU - Biswas, Subhajit
AU - McNulty, David
AU - Downing, Clive
AU - Raha, Sreyan
AU - O'Regan, Colm
AU - Singha, Achintya
AU - O'Dwyer, Colm
AU - Holmes, Justin D.
N1 - Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/6/11
Y1 - 2019/6/11
N2 - We report for the first time the self-catalyzed, single-step growth of branched GeSn nanostructures by a vapor-liquid-solid mechanism. These typical GeSn nanostructures consist of «111»-oriented, Sn-rich (∼8 atom %) GeSn "branches" grown epitaxially on GeSn "trunks", with a Sn content of ∼4 atom %. The trunks were seeded from Au0.80Ag0.20 nanoparticles followed by the catalytic growth of secondary branches (diameter ∼50 nm) from the excess of Sn on the sidewalls of the trunks, as determined by high-resolution electron microscopy and energy-dispersive X-ray analysis. The nanowires, with «111»-directed GeSn branches oriented at ∼70° to the trunks, have no apparent defects or change in crystal structure at the trunk-branch interface; structural quality is retained at the interface with epitaxial crystallographic relation. The electrochemical performance of these highly ordered GeSn nanostructures was explored as a potential anode material for Li-ion batteries, due to their high surface-to-volume ratio and increased charge carrier pathways. The unique structure of the branched nanowires led to high specific capacities comparable to, or greater than, those of conventional Ge nanowire anode materials and Ge1-xSnx nanocrystals.
AB - We report for the first time the self-catalyzed, single-step growth of branched GeSn nanostructures by a vapor-liquid-solid mechanism. These typical GeSn nanostructures consist of «111»-oriented, Sn-rich (∼8 atom %) GeSn "branches" grown epitaxially on GeSn "trunks", with a Sn content of ∼4 atom %. The trunks were seeded from Au0.80Ag0.20 nanoparticles followed by the catalytic growth of secondary branches (diameter ∼50 nm) from the excess of Sn on the sidewalls of the trunks, as determined by high-resolution electron microscopy and energy-dispersive X-ray analysis. The nanowires, with «111»-directed GeSn branches oriented at ∼70° to the trunks, have no apparent defects or change in crystal structure at the trunk-branch interface; structural quality is retained at the interface with epitaxial crystallographic relation. The electrochemical performance of these highly ordered GeSn nanostructures was explored as a potential anode material for Li-ion batteries, due to their high surface-to-volume ratio and increased charge carrier pathways. The unique structure of the branched nanowires led to high specific capacities comparable to, or greater than, those of conventional Ge nanowire anode materials and Ge1-xSnx nanocrystals.
UR - http://www.scopus.com/inward/record.url?scp=85079477589&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.9b00475
DO - 10.1021/acs.chemmater.9b00475
M3 - Article
AN - SCOPUS:85079477589
SN - 0897-4756
VL - 31
SP - 4016
EP - 4024
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 11
ER -