Optical and microstructural studies of InGaN/GaN quantum dot ensembles

S. C. Davies; D. J. Mowbray; F. Ranalli; P. J. Parbrook; Q. Wang; T. Wang; B. S. Yea; B. J. Sherliker; M. P. Halsall; R. J. Kashtiban; U. Bangert

doi:10.1063/1.3226645

Optical and microstructural studies of InGaN/GaN quantum dot ensembles

S. C. Davies, D. J. Mowbray, F. Ranalli, P. J. Parbrook, Q. Wang, T. Wang, B. S. Yea, B. J. Sherliker, M. P. Halsall, R. J. Kashtiban, U. Bangert

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Abstract

An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra.

Original language	English
Article number	111903
Journal	Applied Physics Letters
Volume	95
Issue number	11
DOIs	https://doi.org/10.1063/1.3226645
Publication status	Published - 2009
Externally published	Yes

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10.1063/1.3226645

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title = "Optical and microstructural studies of InGaN/GaN quantum dot ensembles",

abstract = "An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra.",

author = "Davies, \{S. C.\} and Mowbray, \{D. J.\} and F. Ranalli and Parbrook, \{P. J.\} and Q. Wang and T. Wang and Yea, \{B. S.\} and Sherliker, \{B. J.\} and Halsall, \{M. P.\} and Kashtiban, \{R. J.\} and U. Bangert",

year = "2009",

doi = "10.1063/1.3226645",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Optical and microstructural studies of InGaN/GaN quantum dot ensembles

AU - Davies, S. C.

AU - Mowbray, D. J.

AU - Ranalli, F.

AU - Parbrook, P. J.

AU - Wang, Q.

AU - Wang, T.

AU - Yea, B. S.

AU - Sherliker, B. J.

AU - Halsall, M. P.

AU - Kashtiban, R. J.

AU - Bangert, U.

PY - 2009

Y1 - 2009

N2 - An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra.

AB - An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra.

UR - https://www.scopus.com/pages/publications/70349512346

U2 - 10.1063/1.3226645

DO - 10.1063/1.3226645

M3 - Article

AN - SCOPUS:70349512346

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111903

ER -

Optical and microstructural studies of InGaN/GaN quantum dot ensembles

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