Optimization of growth conditions for strain compensated Ga 0.32In0.68As/Ga0.61In0.39As multiple quantum wells

A. D. Smith, A. T.R. Briggs, K. Scarrott, Xiao Zhou, U. Bangert

Research output: Contribution to journalArticlepeer-review

Abstract

The results of an investigation into the growth of Ga0.32In 0.68As/Ga0.61In0.39As strain compensated multiple quantum well stacks are presented. We show that these structures, which contain alloys that are not prone to compositional clustering, do suffer from thickness modulated growth. A growth strategy has been developed to inhibit this phenomenon and a 50 well, strain compensated stack has been grown with planar and abrupt interfaces.

Original languageEnglish
Pages (from-to)2311-2313
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number18
DOIs
Publication statusPublished - 1994

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