Abstract
The results of an investigation into the growth of Ga0.32In 0.68As/Ga0.61In0.39As strain compensated multiple quantum well stacks are presented. We show that these structures, which contain alloys that are not prone to compositional clustering, do suffer from thickness modulated growth. A growth strategy has been developed to inhibit this phenomenon and a 50 well, strain compensated stack has been grown with planar and abrupt interfaces.
Original language | English |
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Pages (from-to) | 2311-2313 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 18 |
DOIs | |
Publication status | Published - 1994 |