Optimization of growth conditions for strain compensated Ga 0.32In0.68As/Ga0.61In0.39As multiple quantum wells

A. D. Smith; A. T.R. Briggs; K. Scarrott; Xiao Zhou; U. Bangert

doi:10.1063/1.112727

Optimization of growth conditions for strain compensated Ga _0.32In_0.68As/Ga_0.61In_0.39As multiple quantum wells

A. D. Smith
, A. T.R. Briggs
, K. Scarrott
, Xiao Zhou
, U. Bangert

Research output: Contribution to journal › Article › peer-review

Abstract

The results of an investigation into the growth of Ga_0.32In _0.68As/Ga_0.61In_0.39As strain compensated multiple quantum well stacks are presented. We show that these structures, which contain alloys that are not prone to compositional clustering, do suffer from thickness modulated growth. A growth strategy has been developed to inhibit this phenomenon and a 50 well, strain compensated stack has been grown with planar and abrupt interfaces.

Original language	English
Pages (from-to)	2311-2313
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	18
DOIs	https://doi.org/10.1063/1.112727
Publication status	Published - 1994
Externally published	Yes

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10.1063/1.112727

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title = "Optimization of growth conditions for strain compensated Ga 0.32In0.68As/Ga0.61In0.39As multiple quantum wells",

abstract = "The results of an investigation into the growth of Ga0.32In 0.68As/Ga0.61In0.39As strain compensated multiple quantum well stacks are presented. We show that these structures, which contain alloys that are not prone to compositional clustering, do suffer from thickness modulated growth. A growth strategy has been developed to inhibit this phenomenon and a 50 well, strain compensated stack has been grown with planar and abrupt interfaces.",

author = "Smith, \{A. D.\} and Briggs, \{A. T.R.\} and K. Scarrott and Xiao Zhou and U. Bangert",

year = "1994",

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AU - Smith, A. D.

AU - Briggs, A. T.R.

AU - Scarrott, K.

AU - Zhou, Xiao

AU - Bangert, U.

PY - 1994

Y1 - 1994

N2 - The results of an investigation into the growth of Ga0.32In 0.68As/Ga0.61In0.39As strain compensated multiple quantum well stacks are presented. We show that these structures, which contain alloys that are not prone to compositional clustering, do suffer from thickness modulated growth. A growth strategy has been developed to inhibit this phenomenon and a 50 well, strain compensated stack has been grown with planar and abrupt interfaces.

AB - The results of an investigation into the growth of Ga0.32In 0.68As/Ga0.61In0.39As strain compensated multiple quantum well stacks are presented. We show that these structures, which contain alloys that are not prone to compositional clustering, do suffer from thickness modulated growth. A growth strategy has been developed to inhibit this phenomenon and a 50 well, strain compensated stack has been grown with planar and abrupt interfaces.

UR - https://www.scopus.com/pages/publications/30244475226

U2 - 10.1063/1.112727

DO - 10.1063/1.112727

M3 - Article

AN - SCOPUS:30244475226

SN - 0003-6951

VL - 65

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Optimization of growth conditions for strain compensated Ga _0.32In_0.68As/Ga_0.61In_0.39As multiple quantum wells

Abstract

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