Oxidation-induced stresses in the isolation oxidation of silicon

Engineering

• Dimensional Form 50%
• Discretization Scheme 50%
• Experimental Result 50%
• Induced Stress 100%
• Nitride 50%
• Numerical Scheme 50%
• Oxide Thickness 50%
• Rigidity 50%
• Silicon Oxide 50%
• Two Dimensional 50%

Material Science

• Nitride Compound 25%
• Oxide Compound 100%
• Oxide Interface 50%
• Rigidity 25%
• Silicon 100%

Chemical Engineering

• Nitride 100%
• Silicon Oxide 100%