Precursor concentration and substrate effects on high rate dip-coated vanadium oxide thin films

Colm Glynn, Damien Aureau, Sally O'Hanlon, Luke Daly, Hugh Geaney, Gillian Collins, Arnaud Etcheberry, Colm O'Dwyer

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Uniform thin films of vanadium pentoxide were dip-coated from a high-concentration vanadium oxytriisopropoxide precursor which is shown to be resistant to the dewetting processes which can form surface pinhole defects. Through appropriate withdrawal speed choice, the thin films have a smooth uniform surface morphology with a low rms roughness of <1 nm in both their amorphous and crystallized states. The structure of the thin films follows that of bulk vanadium pentoxide but in a nanostructured form. The deposition methods shown can be applied to prepare thin films upon a variety of different substrates and other alkoxide based metal oxide materials.

Original languageEnglish
Title of host publicationTransparent Conducting Materials for Electronics and Photonics
EditorsJ. K. Kim, C. O'Dwyer, J. H. He, O. M. Leonte
PublisherElectrochemical Society Inc.
Pages1-9
Number of pages9
Edition42
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2014
Externally publishedYes
EventSymposium on Transparent Conducting Materials for Electronics and Photonics - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 5 Oct 20149 Oct 2014

Publication series

NameECS Transactions
Number42
Volume64
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Transparent Conducting Materials for Electronics and Photonics - 2014 ECS and SMEQ Joint International Meeting
Country/TerritoryMexico
CityCancun
Period5/10/149/10/14

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