Preferential 〈111〉A pore propagation mechanism in n-InP anodized in KOH

R. Lynch, C. O'Dwyer, N. Quill, S. Nakahara, S. B. Newcomb, D. N. Buckley

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper describes the formation of pores during the anodization of n-InP in aqueous KOH. The pores propagate preferentially along the 〈111〉A crystallographic directions and form truncated tetrahedral domains. A model is presented that explains preferential 〈111〉A pore propagation and the uniform diameters of pores. The model outlines how pores can deviate from the 〈111〉A directions and from their characteristic diameters. It also details the effect of variation of carrier concentration on the dimensions of the porous structures.

Original languageEnglish
Title of host publicationECS Transactions - Porous Semiconductors
Subtitle of host publicationA Symposium Held in Memory of Vitali Parkhutik and Volker Lehmann
PublisherElectrochemical Society Inc.
Pages393-404
Number of pages12
Edition3
ISBN (Print)9781566776493
DOIs
Publication statusPublished - 2009
EventPorous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lehmann - 214th ECS Meeting - Honolulu, HI, United States
Duration: 12 Oct 200817 Oct 2008

Publication series

NameECS Transactions
Number3
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferencePorous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lehmann - 214th ECS Meeting
Country/TerritoryUnited States
CityHonolulu, HI
Period12/10/0817/10/08

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