@inproceedings{43f31ddba9bd47ce9781f6b7c1acd3c1,
title = "Preferential 〈111〉A pore propagation mechanism in n-InP anodized in KOH",
abstract = "This paper describes the formation of pores during the anodization of n-InP in aqueous KOH. The pores propagate preferentially along the 〈111〉A crystallographic directions and form truncated tetrahedral domains. A model is presented that explains preferential 〈111〉A pore propagation and the uniform diameters of pores. The model outlines how pores can deviate from the 〈111〉A directions and from their characteristic diameters. It also details the effect of variation of carrier concentration on the dimensions of the porous structures.",
author = "R. Lynch and C. O'Dwyer and N. Quill and S. Nakahara and Newcomb, {S. B.} and Buckley, {D. N.}",
year = "2009",
doi = "10.1149/1.2982579",
language = "English",
isbn = "9781566776493",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "393--404",
booktitle = "ECS Transactions - Porous Semiconductors",
edition = "3",
note = "Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lehmann - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",
}