Probing the bonding and electronic structure of single atom dopants in graphene with electron energy loss spectroscopy

Quentin M. Ramasse; Che R. Seaboume; Despoina Maria Kepaptsoglou; Recep Zan; Ursel Bangert; Andrew J. Scott

doi:10.1021/nl304187e

Probing the bonding and electronic structure of single atom dopants in graphene with electron energy loss spectroscopy

Quentin M. Ramasse, Che R. Seaboume, Despoina Maria Kepaptsoglou, Recep Zan, Ursel Bangert, Andrew J. Scott

Research output: Contribution to journal › Article › peer-review

Abstract

A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations reveal strung electronic structure differences between two distinct single substitutional Si defect geometries in graphene. Optimised acquisition conditions allow for exceptional signal-to-noise levels in the spectroscopic data. The near-edge fine structure can be compared with great accuracy to simulations and reveal either an spMike configuration for a trivalent Si or a more complicated hybridized structure for a tetravalent Si impurity.

Original language	English
Pages (from-to)	4989-4995
Number of pages	7
Journal	Nano Letters
Volume	13
Issue number	10
DOIs	https://doi.org/10.1021/nl304187e
Publication status	Published - 21 Dec 2012
Externally published	Yes

Keywords

Bonding
Doping
EELS
Electronic structure
Graphene
STEM

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10.1021/nl304187e

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abstract = "A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations reveal strung electronic structure differences between two distinct single substitutional Si defect geometries in graphene. Optimised acquisition conditions allow for exceptional signal-to-noise levels in the spectroscopic data. The near-edge fine structure can be compared with great accuracy to simulations and reveal either an spMike configuration for a trivalent Si or a more complicated hybridized structure for a tetravalent Si impurity.",

keywords = "Bonding, Doping, EELS, Electronic structure, Graphene, STEM",

author = "Ramasse, {Quentin M.} and Seaboume, {Che R.} and Kepaptsoglou, {Despoina Maria} and Recep Zan and Ursel Bangert and Scott, {Andrew J.}",

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AU - Ramasse, Quentin M.

AU - Seaboume, Che R.

AU - Kepaptsoglou, Despoina Maria

AU - Zan, Recep

AU - Bangert, Ursel

AU - Scott, Andrew J.

PY - 2012/12/21

Y1 - 2012/12/21

N2 - A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations reveal strung electronic structure differences between two distinct single substitutional Si defect geometries in graphene. Optimised acquisition conditions allow for exceptional signal-to-noise levels in the spectroscopic data. The near-edge fine structure can be compared with great accuracy to simulations and reveal either an spMike configuration for a trivalent Si or a more complicated hybridized structure for a tetravalent Si impurity.

AB - A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations reveal strung electronic structure differences between two distinct single substitutional Si defect geometries in graphene. Optimised acquisition conditions allow for exceptional signal-to-noise levels in the spectroscopic data. The near-edge fine structure can be compared with great accuracy to simulations and reveal either an spMike configuration for a trivalent Si or a more complicated hybridized structure for a tetravalent Si impurity.

KW - Bonding

KW - Doping

KW - EELS

KW - Electronic structure

KW - Graphene

KW - STEM

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SP - 4989

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JO - Nano Letters

JF - Nano Letters

IS - 10

ER -

Probing the bonding and electronic structure of single atom dopants in graphene with electron energy loss spectroscopy

Abstract

Keywords

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