Process of formation of porous layers in n-InP

N. Quill, I. Clancy, S. Nakahara, S. Belochapkine, C. O'Dwyer, D. N. Buckley, R. P. Lynch

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper describes variations in current density observed in linear sweep voltammetry curves during the anodization of n-InP in aqueous KOH electrolyte and how these variations arise. The analysis is performed by stopping the anodization after different durations of etching and observing via scanning electron microscopy and other techniques the porous structures that have formed. A mathematical model for the expansion and merging of domains of pores that propagate preferentially along the <111>A directions is also presented and used to explain the previously mentioned variations in current density.

Original languageEnglish
Title of host publicationProcesses at the Semiconductor Solution Interface 7
EditorsC. O'Dwyer, D. N. Buckley, A. Etcheberry, A. Hillier, R. P. Lynch, P. Vereecken, H. Wang, M. Sunkara
PublisherElectrochemical Society Inc.
Pages67-96
Number of pages30
Edition4
ISBN (Electronic)9781607688075
DOIs
Publication statusPublished - 2017
EventProcesses at the Semiconductor Solution Interface 7, PSSI 2017 - 231st ECS Meeting 2017 - New Orleans, United States
Duration: 28 May 20171 Jun 2017

Publication series

NameECS Transactions
Number4
Volume77
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceProcesses at the Semiconductor Solution Interface 7, PSSI 2017 - 231st ECS Meeting 2017
Country/TerritoryUnited States
CityNew Orleans
Period28/05/171/06/17

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