Pseudocapacitive charge storage at nanoscale silicon electrodes

W. McSweeney; H. Geaney; C. Glynn; D. McNulty; C. O'Dwyer

doi:10.1149/06606.0039ecst

Pseudocapacitive charge storage at nanoscale silicon electrodes

W. McSweeney
, H. Geaney
, C. Glynn
, D. McNulty
, C. O'Dwyer

University College Cork

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Pseudocapacitive behaviour can be accessed when Si nanowire (NW) electrodes are scanned at relatively fast potential scan rates in Li-ion battery electrolytes. Measurements using cyclic voltammetry supported by electron microscopy confirm that Si NWs formed on silicon substrates, as opposed to metallic current collectors, do not solely undergo alloying reactions. The influence of doping type, carrier concentration and bias condition during voltammetric polarization significantly alters the mechanism of electrochemical energy storage. The formation of a carrier depleted (electrically dead) layer of n-type NWs on silicon current collector electrodes limits insertion or alloying processes and rates that ordinarily form Li-Si phases, and charge is also stored within the electric double layer via pseudocapacitive processes. P-type NWs with solid crystalline cores also exhibit pseudocapacitive charge storage without structural modification of the NWs.

Original language	English
Title of host publication	Processes at the Semiconductor Solution Interface 6
Editors	C. O'Dwyer, D. N. Buckley, A. Etcheberry, A. C. Hillier, R. P. Lynch, P. M. Vereecken, H. Wang, O. M. Leonte
Publisher	Electrochemical Society Inc.
Pages	39-48
Number of pages	10
Edition	6
ISBN (Electronic)	9781607685968
DOIs	https://doi.org/10.1149/06606.0039ecst
Publication status	Published - 2015
Externally published	Yes
Event	Symposium on Processes at the Semiconductor Solution Interface 6 - 227th ECS Meeting - Chicago, United States Duration: 24 May 2015 → 28 May 2015

Publication series

Name	ECS Transactions
Number	6
Volume	66
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Processes at the Semiconductor Solution Interface 6 - 227th ECS Meeting
Country/Territory	United States
City	Chicago
Period	24/05/15 → 28/05/15

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1149/06606.0039ecst

Cite this

McSweeney, W., Geaney, H., Glynn, C., McNulty, D., & O'Dwyer, C. (2015). Pseudocapacitive charge storage at nanoscale silicon electrodes. In C. O'Dwyer, D. N. Buckley, A. Etcheberry, A. C. Hillier, R. P. Lynch, P. M. Vereecken, H. Wang, & O. M. Leonte (Eds.), Processes at the Semiconductor Solution Interface 6 (6 ed., pp. 39-48). (ECS Transactions; Vol. 66, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/06606.0039ecst

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title = "Pseudocapacitive charge storage at nanoscale silicon electrodes",

abstract = "Pseudocapacitive behaviour can be accessed when Si nanowire (NW) electrodes are scanned at relatively fast potential scan rates in Li-ion battery electrolytes. Measurements using cyclic voltammetry supported by electron microscopy confirm that Si NWs formed on silicon substrates, as opposed to metallic current collectors, do not solely undergo alloying reactions. The influence of doping type, carrier concentration and bias condition during voltammetric polarization significantly alters the mechanism of electrochemical energy storage. The formation of a carrier depleted (electrically dead) layer of n-type NWs on silicon current collector electrodes limits insertion or alloying processes and rates that ordinarily form Li-Si phases, and charge is also stored within the electric double layer via pseudocapacitive processes. P-type NWs with solid crystalline cores also exhibit pseudocapacitive charge storage without structural modification of the NWs.",

author = "W. McSweeney and H. Geaney and C. Glynn and D. McNulty and C. O'Dwyer",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Processes at the Semiconductor Solution Interface 6 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",

year = "2015",

doi = "10.1149/06606.0039ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "6",

pages = "39--48",

editor = "C. O'Dwyer and Buckley, \{D. N.\} and A. Etcheberry and Hillier, \{A. C.\} and Lynch, \{R. P.\} and Vereecken, \{P. M.\} and H. Wang and Leonte, \{O. M.\}",

booktitle = "Processes at the Semiconductor Solution Interface 6",

edition = "6",

}

McSweeney, W, Geaney, H, Glynn, C, McNulty, D & O'Dwyer, C 2015, Pseudocapacitive charge storage at nanoscale silicon electrodes. in C O'Dwyer, DN Buckley, A Etcheberry, AC Hillier, RP Lynch, PM Vereecken, H Wang & OM Leonte (eds), Processes at the Semiconductor Solution Interface 6. 6 edn, ECS Transactions, no. 6, vol. 66, Electrochemical Society Inc., pp. 39-48, Symposium on Processes at the Semiconductor Solution Interface 6 - 227th ECS Meeting, Chicago, United States, 24/05/15. https://doi.org/10.1149/06606.0039ecst

Pseudocapacitive charge storage at nanoscale silicon electrodes. / McSweeney, W.; Geaney, H.; Glynn, C. et al.
Processes at the Semiconductor Solution Interface 6. ed. / C. O'Dwyer; D. N. Buckley; A. Etcheberry; A. C. Hillier; R. P. Lynch; P. M. Vereecken; H. Wang; O. M. Leonte. 6. ed. Electrochemical Society Inc., 2015. p. 39-48 (ECS Transactions; Vol. 66, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Pseudocapacitive charge storage at nanoscale silicon electrodes

AU - McSweeney, W.

AU - Geaney, H.

AU - Glynn, C.

AU - McNulty, D.

AU - O'Dwyer, C.

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2015

Y1 - 2015

N2 - Pseudocapacitive behaviour can be accessed when Si nanowire (NW) electrodes are scanned at relatively fast potential scan rates in Li-ion battery electrolytes. Measurements using cyclic voltammetry supported by electron microscopy confirm that Si NWs formed on silicon substrates, as opposed to metallic current collectors, do not solely undergo alloying reactions. The influence of doping type, carrier concentration and bias condition during voltammetric polarization significantly alters the mechanism of electrochemical energy storage. The formation of a carrier depleted (electrically dead) layer of n-type NWs on silicon current collector electrodes limits insertion or alloying processes and rates that ordinarily form Li-Si phases, and charge is also stored within the electric double layer via pseudocapacitive processes. P-type NWs with solid crystalline cores also exhibit pseudocapacitive charge storage without structural modification of the NWs.

AB - Pseudocapacitive behaviour can be accessed when Si nanowire (NW) electrodes are scanned at relatively fast potential scan rates in Li-ion battery electrolytes. Measurements using cyclic voltammetry supported by electron microscopy confirm that Si NWs formed on silicon substrates, as opposed to metallic current collectors, do not solely undergo alloying reactions. The influence of doping type, carrier concentration and bias condition during voltammetric polarization significantly alters the mechanism of electrochemical energy storage. The formation of a carrier depleted (electrically dead) layer of n-type NWs on silicon current collector electrodes limits insertion or alloying processes and rates that ordinarily form Li-Si phases, and charge is also stored within the electric double layer via pseudocapacitive processes. P-type NWs with solid crystalline cores also exhibit pseudocapacitive charge storage without structural modification of the NWs.

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A2 - O'Dwyer, C.

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A2 - Vereecken, P. M.

A2 - Wang, H.

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PB - Electrochemical Society Inc.

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ER -

McSweeney W, Geaney H, Glynn C, McNulty D, O'Dwyer C. Pseudocapacitive charge storage at nanoscale silicon electrodes. In O'Dwyer C, Buckley DN, Etcheberry A, Hillier AC, Lynch RP, Vereecken PM, Wang H, Leonte OM, editors, Processes at the Semiconductor Solution Interface 6. 6 ed. Electrochemical Society Inc. 2015. p. 39-48. (ECS Transactions; 6). doi: 10.1149/06606.0039ecst

Pseudocapacitive charge storage at nanoscale silicon electrodes

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UN SDGs

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