Abstract
The range of krypton ions implanted in LiF has been determined by RBS measurements. The data reveal a decomposition of the LiF lattice with a preferential loss of fluorine. Halogen loss may be attributed to the electronic processes of defect formation which operate in alkali halides. LiF doped with uranium ions is modified by the Kr implantation and the initially uniform depth concentration changes to one with a peak in the uranium distribution. This maximum lies midway between the surface and Rp of the krypton. The resultant uranium impurity profile resembles those described by radiation enhanced diffusion of impurities in ion bombarded metals. The present data for LiF:U are also interpreted as an example of radiation enhanced impurity diffusion. The range of the implanted Kr ions is in good agreement with the theoretical range calculated using a Lindhard interaction potential. For 200 keV Kr+ ions this gives Rp∼85 nm. The distribution is considerably more spread than expected from the range theory. This is viewed as resulting from radiation enhanced diffusion of the implanted krypton.
| Original language | English |
|---|---|
| Pages (from-to) | 1111-1115 |
| Number of pages | 5 |
| Journal | Nuclear Instruments and Methods In Physics Research |
| Volume | 209-210 |
| Issue number | PART 2 |
| DOIs | |
| Publication status | Published - 1983 |
| Externally published | Yes |