Raman study of stress effect on Ge nanocrystals embedded in Al 2O3

S. R.C. Pinto; A. G. Rolo; A. Chahboun; R. J. Kashtiban; U. Bangert; M. J.M. Gomes

doi:10.1016/j.tsf.2010.03.035

Raman study of stress effect on Ge nanocrystals embedded in Al ₂O₃

S. R.C. Pinto, A. G. Rolo, A. Chahboun, R. J. Kashtiban, U. Bangert, M. J.M. Gomes

Retired Staff

Research output: Contribution to journal › Article › peer-review

Abstract

Ge nanocrystals (NCs) embedded in Al₂O₃ were grown by RF-sputtering. X-ray diffraction, high resolution transmission electron microscopy, and Raman spectroscopy techniques were used to characterize the stresses on the NCs. While small NCs (< 10 nm) have been observed to be spherical and fully relaxed in the matrix, the larger ones (> 17 nm) demonstrated a compressive stress effect. This could be linked to the crystal structure of the adjacent Al₂O₃ matrix.

Original language	English
Pages (from-to)	5378-5381
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	19
DOIs	https://doi.org/10.1016/j.tsf.2010.03.035
Publication status	Published - 30 Jul 2010

Keywords

Aluminium oxide
Germanium
Nanocrystals
Raman spectroscopy
Stress
Transmission electron microscopy

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10.1016/j.tsf.2010.03.035

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@article{1840620b88154c04855652c23e3fda83,

title = "Raman study of stress effect on Ge nanocrystals embedded in Al 2O3",

abstract = "Ge nanocrystals (NCs) embedded in Al2O3 were grown by RF-sputtering. X-ray diffraction, high resolution transmission electron microscopy, and Raman spectroscopy techniques were used to characterize the stresses on the NCs. While small NCs (< 10 nm) have been observed to be spherical and fully relaxed in the matrix, the larger ones (> 17 nm) demonstrated a compressive stress effect. This could be linked to the crystal structure of the adjacent Al2O3 matrix.",

keywords = "Aluminium oxide, Germanium, Nanocrystals, Raman spectroscopy, Stress, Transmission electron microscopy",

author = "Pinto, {S. R.C.} and Rolo, {A. G.} and A. Chahboun and Kashtiban, {R. J.} and U. Bangert and Gomes, {M. J.M.}",

year = "2010",

month = jul,

day = "30",

doi = "10.1016/j.tsf.2010.03.035",

language = "English",

volume = "518",

pages = "5378--5381",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "19",

}

TY - JOUR

T1 - Raman study of stress effect on Ge nanocrystals embedded in Al 2O3

AU - Pinto, S. R.C.

AU - Rolo, A. G.

AU - Chahboun, A.

AU - Kashtiban, R. J.

AU - Bangert, U.

AU - Gomes, M. J.M.

PY - 2010/7/30

Y1 - 2010/7/30

N2 - Ge nanocrystals (NCs) embedded in Al2O3 were grown by RF-sputtering. X-ray diffraction, high resolution transmission electron microscopy, and Raman spectroscopy techniques were used to characterize the stresses on the NCs. While small NCs (< 10 nm) have been observed to be spherical and fully relaxed in the matrix, the larger ones (> 17 nm) demonstrated a compressive stress effect. This could be linked to the crystal structure of the adjacent Al2O3 matrix.

AB - Ge nanocrystals (NCs) embedded in Al2O3 were grown by RF-sputtering. X-ray diffraction, high resolution transmission electron microscopy, and Raman spectroscopy techniques were used to characterize the stresses on the NCs. While small NCs (< 10 nm) have been observed to be spherical and fully relaxed in the matrix, the larger ones (> 17 nm) demonstrated a compressive stress effect. This could be linked to the crystal structure of the adjacent Al2O3 matrix.

KW - Aluminium oxide

KW - Germanium

KW - Nanocrystals

KW - Raman spectroscopy

KW - Stress

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=77955662199&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2010.03.035

DO - 10.1016/j.tsf.2010.03.035

M3 - Article

AN - SCOPUS:77955662199

SN - 0040-6090

VL - 518

SP - 5378

EP - 5381

JO - Thin Solid Films

JF - Thin Solid Films

IS - 19

ER -

Raman study of stress effect on Ge nanocrystals embedded in Al ₂O₃

Abstract

Keywords

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