TY - JOUR
T1 - Rapid, Low-Temperature Synthesis of Germanium Nanowires from Oligosilylgermane Precursors
AU - Aghazadeh Meshgi, Mohammad
AU - Biswas, Subhajit
AU - McNulty, David
AU - O'Dwyer, Colm
AU - Alessio Verni, Giuseppe
AU - O'Connell, John
AU - Davitt, Fionán
AU - Letofsky-Papst, Ilse
AU - Poelt, Peter
AU - Holmes, Justin D.
AU - Marschner, Christoph
N1 - Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/5/23
Y1 - 2017/5/23
N2 - New oligosilylgermane compounds with weak Ge-H bonds have been used as precursors for the rapid synthesis of germanium (Ge) nanowires in high yields (>80%), via a solution-liquid-solid (SLS) mechanism, using indium (In) nanoparticles as a seeding agent over a temperature range between 180 and 380 °C. Even at low growth temperatures, milligram quantities of Ge nanowires could be synthesized over a reaction period of between 5 and 10 min. The speed of release of Ge(0) into the reaction environment can be tuned by altering the precursor type, synthesis temperature, and the presence or lack of an oxidizing agent, such as tri-n-octylphosphine oxide (TOPO). Energy-dispersive X-ray analysis showed that silicon atoms from the precursors were not incorporated into the structure of the Ge nanowires. As both In and Ge facilitate reversible alloying with Li, Li-ion battery anodes fabricated with these nanowires cycled efficiently with specific capacities, i.e.,
AB - New oligosilylgermane compounds with weak Ge-H bonds have been used as precursors for the rapid synthesis of germanium (Ge) nanowires in high yields (>80%), via a solution-liquid-solid (SLS) mechanism, using indium (In) nanoparticles as a seeding agent over a temperature range between 180 and 380 °C. Even at low growth temperatures, milligram quantities of Ge nanowires could be synthesized over a reaction period of between 5 and 10 min. The speed of release of Ge(0) into the reaction environment can be tuned by altering the precursor type, synthesis temperature, and the presence or lack of an oxidizing agent, such as tri-n-octylphosphine oxide (TOPO). Energy-dispersive X-ray analysis showed that silicon atoms from the precursors were not incorporated into the structure of the Ge nanowires. As both In and Ge facilitate reversible alloying with Li, Li-ion battery anodes fabricated with these nanowires cycled efficiently with specific capacities, i.e.,
UR - http://www.scopus.com/inward/record.url?scp=85019707208&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.7b00714
DO - 10.1021/acs.chemmater.7b00714
M3 - Article
AN - SCOPUS:85019707208
SN - 0897-4756
VL - 29
SP - 4351
EP - 4360
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 10
ER -
