Semiconductor optical amplifier parameter extraction using a wideband steady-state numerical model and the Levenberg-Marquardt method

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Abstract

Parameter extraction of semiconductor optical amplifier was carried out using wideband steady-state numerical model and the Levenberg-Marquardt method. An amplified spontaneous emission (ASE) spectrum and signal gain versus bias characteristic measurements and Levenberg-Marquardt method was used to determine the material parameters of a homogeneous buried ridge stripe SOA. The SOA carrier density and total signal and ASE photon rates for a signal power above saturation were presented. The results show that the analysis of such spatial distributions can be used to aid SOA designs and optimization.

Original languageEnglish
Title of host publicationProceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD '04
EditorsJ. Piprek, S. Li
Pages38-39
Number of pages2
Publication statusPublished - 2004
EventProceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD '04 - Santa Barbara, CA, United States
Duration: 24 Aug 200426 Aug 2004

Publication series

NameProceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD '04

Conference

ConferenceProceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD '04
Country/TerritoryUnited States
CitySanta Barbara, CA
Period24/08/0426/08/04

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