Simulation and validation of SiO2 LPCVD from TEOS in a vertical 300 mm multi-wafer reactor

G. J. Schoof; C. R. Kleijn; H. E.A. Van Den Akker; T. G.M. Oosterlaken; H. J.C.M. Terhorst; F. Huussen

doi:10.1051/jp4:20020077

Simulation and validation of SiO₂ LPCVD from TEOS in a vertical 300 mm multi-wafer reactor

G. J. Schoof, C. R. Kleijn, H. E.A. Van Den Akker, T. G.M. Oosterlaken, H. J.C.M. Terhorst, F. Huussen

Delft University of Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

Combining a slightly modified version of the chemical reaction mechanism for silicon-dioxide LPCVD from TEOS as proposed by Coltrin and coworkers, and the commercially available CFD program CFD-ACE+, a 2D model has been derived for gas flow, transport phenomena and deposition chemistry in the ASM A412 vertical 300mm multi-wafer reactor. Silicon-dioxide deposition from TEOS is strongly influenced by gas-phase reactions, producing a reactive intermediate that is responsible for the majority of deposition. This phenomenon underlines the importance of the chemistry model in simulations. As a result of the gas phase intermediate, strong radial non-uniformities are observed. The simulation results have been validated against experimental growth rate data for various process conditions.

Original language	English
Pages (from-to)	Pr4/51-Pr4/62
Journal	Journal De Physique. IV : JP
Volume	12
Issue number	4
DOIs	https://doi.org/10.1051/jp4:20020077
Publication status	Published - Jun 2002
Externally published	Yes
Event	13th European Conference on Chemical Vapor Deposition - Glyfada, Athens, Greece Duration: 26 Aug 2001 → 31 Aug 2001

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title = "Simulation and validation of SiO2 LPCVD from TEOS in a vertical 300 mm multi-wafer reactor",

abstract = "Combining a slightly modified version of the chemical reaction mechanism for silicon-dioxide LPCVD from TEOS as proposed by Coltrin and coworkers, and the commercially available CFD program CFD-ACE+, a 2D model has been derived for gas flow, transport phenomena and deposition chemistry in the ASM A412 vertical 300mm multi-wafer reactor. Silicon-dioxide deposition from TEOS is strongly influenced by gas-phase reactions, producing a reactive intermediate that is responsible for the majority of deposition. This phenomenon underlines the importance of the chemistry model in simulations. As a result of the gas phase intermediate, strong radial non-uniformities are observed. The simulation results have been validated against experimental growth rate data for various process conditions.",

author = "Schoof, {G. J.} and Kleijn, {C. R.} and {Van Den Akker}, {H. E.A.} and Oosterlaken, {T. G.M.} and Terhorst, {H. J.C.M.} and F. Huussen",

year = "2002",

month = jun,

doi = "10.1051/jp4:20020077",

language = "English",

volume = "12",

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journal = "Journal De Physique. IV : JP",

issn = "1155-4339",

number = "4",

note = "13th European Conference on Chemical Vapor Deposition ; Conference date: 26-08-2001 Through 31-08-2001",

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TY - JOUR

T1 - Simulation and validation of SiO2 LPCVD from TEOS in a vertical 300 mm multi-wafer reactor

AU - Schoof, G. J.

AU - Kleijn, C. R.

AU - Van Den Akker, H. E.A.

AU - Oosterlaken, T. G.M.

AU - Terhorst, H. J.C.M.

AU - Huussen, F.

PY - 2002/6

Y1 - 2002/6

N2 - Combining a slightly modified version of the chemical reaction mechanism for silicon-dioxide LPCVD from TEOS as proposed by Coltrin and coworkers, and the commercially available CFD program CFD-ACE+, a 2D model has been derived for gas flow, transport phenomena and deposition chemistry in the ASM A412 vertical 300mm multi-wafer reactor. Silicon-dioxide deposition from TEOS is strongly influenced by gas-phase reactions, producing a reactive intermediate that is responsible for the majority of deposition. This phenomenon underlines the importance of the chemistry model in simulations. As a result of the gas phase intermediate, strong radial non-uniformities are observed. The simulation results have been validated against experimental growth rate data for various process conditions.

AB - Combining a slightly modified version of the chemical reaction mechanism for silicon-dioxide LPCVD from TEOS as proposed by Coltrin and coworkers, and the commercially available CFD program CFD-ACE+, a 2D model has been derived for gas flow, transport phenomena and deposition chemistry in the ASM A412 vertical 300mm multi-wafer reactor. Silicon-dioxide deposition from TEOS is strongly influenced by gas-phase reactions, producing a reactive intermediate that is responsible for the majority of deposition. This phenomenon underlines the importance of the chemistry model in simulations. As a result of the gas phase intermediate, strong radial non-uniformities are observed. The simulation results have been validated against experimental growth rate data for various process conditions.

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U2 - 10.1051/jp4:20020077

DO - 10.1051/jp4:20020077

M3 - Conference article

AN - SCOPUS:0036612492

SN - 1155-4339

VL - 12

SP - Pr4/51-Pr4/62

JO - Journal De Physique. IV : JP

JF - Journal De Physique. IV : JP

IS - 4

T2 - 13th European Conference on Chemical Vapor Deposition

Y2 - 26 August 2001 through 31 August 2001

ER -

Simulation and validation of SiO₂ LPCVD from TEOS in a vertical 300 mm multi-wafer reactor

Abstract

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