Single molecular precursor for synthesis of GaAs nanoparticles

M. A. Malik, M. Afzaal, P. O'Brien, U. Bangert, B. Hamilton

Research output: Contribution to journalArticlepeer-review

Abstract

The dimer [Bu2AsGaMe2]2 has been used as a precursor for the synthesis of GaAs nanoparticles in hexadecylamine (HDA), the first time that a single source organometallic precursor has been used to grow GaAs nanoparticles. The particles show intense absorptions with a considerable blue shift in their optical spectra as compared with parent bulk materials. Photoluminescence measurements on thin films of GaAs nanoparticles on a Si(100) substrate at 30 K and at helium temperature exhibit a significant difference in the luminescence efficiency. The powder X-ray diffraction (PXRD) pattern shows the particles to be cubic GaAs, and high resolution transmission electron microscopy (HRTEM) confirms the single crystalline nature of the dots with an average size ∼3.2 nm. Energy dispersive X-ray (EDAX) measurements and microanalysis indicate that the stoichiometry of GaAs nanoparticles is close to ∼1:1.

Original languageEnglish
Pages (from-to)959-963
Number of pages5
JournalMaterials Science and Technology (United Kingdom)
Volume20
Issue number8
DOIs
Publication statusPublished - Aug 2004
Externally publishedYes

Keywords

  • Dots
  • Gallium arsenide
  • High resolution TEM
  • Nanoparticles
  • Single crystals
  • Synthesis
  • X-ray powder diffraction

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