Abstract
The dimer [Bu2AsGaMe2]2 has been used as a precursor for the synthesis of GaAs nanoparticles in hexadecylamine (HDA), the first time that a single source organometallic precursor has been used to grow GaAs nanoparticles. The particles show intense absorptions with a considerable blue shift in their optical spectra as compared with parent bulk materials. Photoluminescence measurements on thin films of GaAs nanoparticles on a Si(100) substrate at 30 K and at helium temperature exhibit a significant difference in the luminescence efficiency. The powder X-ray diffraction (PXRD) pattern shows the particles to be cubic GaAs, and high resolution transmission electron microscopy (HRTEM) confirms the single crystalline nature of the dots with an average size ∼3.2 nm. Energy dispersive X-ray (EDAX) measurements and microanalysis indicate that the stoichiometry of GaAs nanoparticles is close to ∼1:1.
Original language | English |
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Pages (from-to) | 959-963 |
Number of pages | 5 |
Journal | Materials Science and Technology (United Kingdom) |
Volume | 20 |
Issue number | 8 |
DOIs | |
Publication status | Published - Aug 2004 |
Externally published | Yes |
Keywords
- Dots
- Gallium arsenide
- High resolution TEM
- Nanoparticles
- Single crystals
- Synthesis
- X-ray powder diffraction