Solution processed ZnO homogeneous quasisuperlattice materials

Engineering

• Thin Films 100%
• Ray Photoelectron Spectroscopy 100%
• Ray Diffraction 50%
• Low-Temperature 50%
• Great Number 50%
• Valence Band 50%
• Annealing Process 50%
• Film Surface 50%
• Solution Processing 50%
• Liquid Precursor 50%
• Thin-Film Transistor 50%
• Maximum Temperature 50%
• Root Mean Square 50%
• Square Roughness 50%
• Silicon Dioxide 50%
• Electronic State 50%
• Phase Composition 50%
• Energy Levels 50%
• Electron Diffraction 50%

Material Science

• Film 100%
• Zinc Oxide 100%
• Thin Films 66%
• Photoluminescence 66%
• X-Ray Photoelectron Spectroscopy 66%
• Oxide Compound 33%
• Spin Coating 33%
• Morphology 33%
• Electronic Property 33%
• Surface Structure 33%
• Metal Oxide 33%
• Optical Property 33%
• Electron Diffraction 33%
• Thin-Film Transistor 33%
• Surface (Surface Science) 33%
• Crystallographic Property 33%
• Energy Levels 33%
• Crystal Growth 33%