Spl γ-radiation dosimeter using the optical and electrical properties of Al/S/CuPc/Al thin films

A. Arshak; S. M. Zleetni; K. Arshak; J. Harris

doi:10.1109/MIEL.2002.1003208

Spl γ-radiation dosimeter using the optical and electrical properties of Al/S/CuPc/Al thin films

A. Arshak
, S. M. Zleetni
, K. Arshak
, J. Harris

University of Limerick
Department of Electronic and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Thermally evaporated thin film PN-junctions with a metal/ Sulfur/Copper- phthalocyanine/ metal structure were fabricated and the effects of γ-radiation on their optical and electrical properties were investigated for the purpose of dosimetry applications. The optical band gap showed slight changes in value when irradiated. The as-deposited and irradiated Al/S/CuPc/Al devices demonstrated Zener diode breakdown under reverse bias voltage and a space-charge-limited conduction mechanism under forward bias. The absorbance, the density of colour centre and Zener break down current exhibited a highly consistent linear response to γ-radiation exposure. However, the best fit for the experimental data was obtained using the Zener breakdown current for γ-ray dose assessment.

Original language	English
Title of host publication	2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
Publisher	IEEE Computer Society
Pages	349-352
Number of pages	4
ISBN (Print)	0780372352, 9780780372351
DOIs	https://doi.org/10.1109/MIEL.2002.1003208
Publication status	Published - 2002
Event	2002 23rd International Conference on Microelectronics, MIEL 2002 - Nis, Serbia Duration: 12 May 2002 → 15 May 2002

Publication series

Name	2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
Volume	1

Conference

Conference	2002 23rd International Conference on Microelectronics, MIEL 2002
Country/Territory	Serbia
City	Nis
Period	12/05/02 → 15/05/02

Access to Document

10.1109/MIEL.2002.1003208

Cite this

Arshak, A., Zleetni, S. M., Arshak, K., & Harris, J. (2002). Spl γ-radiation dosimeter using the optical and electrical properties of Al/S/CuPc/Al thin films. In 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings (pp. 349-352). Article 1003208 (2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/MIEL.2002.1003208

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title = "Spl γ-radiation dosimeter using the optical and electrical properties of Al/S/CuPc/Al thin films",

abstract = "Thermally evaporated thin film PN-junctions with a metal/ Sulfur/Copper- phthalocyanine/ metal structure were fabricated and the effects of γ-radiation on their optical and electrical properties were investigated for the purpose of dosimetry applications. The optical band gap showed slight changes in value when irradiated. The as-deposited and irradiated Al/S/CuPc/Al devices demonstrated Zener diode breakdown under reverse bias voltage and a space-charge-limited conduction mechanism under forward bias. The absorbance, the density of colour centre and Zener break down current exhibited a highly consistent linear response to γ-radiation exposure. However, the best fit for the experimental data was obtained using the Zener breakdown current for γ-ray dose assessment.",

author = "A. Arshak and Zleetni, \{S. M.\} and K. Arshak and J. Harris",

year = "2002",

doi = "10.1109/MIEL.2002.1003208",

language = "English",

isbn = "0780372352",

series = "2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",

publisher = "IEEE Computer Society",

pages = "349--352",

booktitle = "2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",

note = "2002 23rd International Conference on Microelectronics, MIEL 2002 ; Conference date: 12-05-2002 Through 15-05-2002",

}

Arshak, A, Zleetni, SM, Arshak, K & Harris, J 2002, Spl γ-radiation dosimeter using the optical and electrical properties of Al/S/CuPc/Al thin films. in 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings., 1003208, 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, vol. 1, IEEE Computer Society, pp. 349-352, 2002 23rd International Conference on Microelectronics, MIEL 2002, Nis, Serbia, 12/05/02. https://doi.org/10.1109/MIEL.2002.1003208

Spl γ-radiation dosimeter using the optical and electrical properties of Al/S/CuPc/Al thin films. / Arshak, A.; Zleetni, S. M.; Arshak, K. et al.
2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. IEEE Computer Society, 2002. p. 349-352 1003208 (2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Spl γ-radiation dosimeter using the optical and electrical properties of Al/S/CuPc/Al thin films

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AU - Harris, J.

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N2 - Thermally evaporated thin film PN-junctions with a metal/ Sulfur/Copper- phthalocyanine/ metal structure were fabricated and the effects of γ-radiation on their optical and electrical properties were investigated for the purpose of dosimetry applications. The optical band gap showed slight changes in value when irradiated. The as-deposited and irradiated Al/S/CuPc/Al devices demonstrated Zener diode breakdown under reverse bias voltage and a space-charge-limited conduction mechanism under forward bias. The absorbance, the density of colour centre and Zener break down current exhibited a highly consistent linear response to γ-radiation exposure. However, the best fit for the experimental data was obtained using the Zener breakdown current for γ-ray dose assessment.

AB - Thermally evaporated thin film PN-junctions with a metal/ Sulfur/Copper- phthalocyanine/ metal structure were fabricated and the effects of γ-radiation on their optical and electrical properties were investigated for the purpose of dosimetry applications. The optical band gap showed slight changes in value when irradiated. The as-deposited and irradiated Al/S/CuPc/Al devices demonstrated Zener diode breakdown under reverse bias voltage and a space-charge-limited conduction mechanism under forward bias. The absorbance, the density of colour centre and Zener break down current exhibited a highly consistent linear response to γ-radiation exposure. However, the best fit for the experimental data was obtained using the Zener breakdown current for γ-ray dose assessment.

UR - https://www.scopus.com/pages/publications/84906655712

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M3 - Conference contribution

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SN - 0780372352

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BT - 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings

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Arshak A, Zleetni SM, Arshak K, Harris J. Spl γ-radiation dosimeter using the optical and electrical properties of Al/S/CuPc/Al thin films. In 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. IEEE Computer Society. 2002. p. 349-352. 1003208. (2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings). doi: 10.1109/MIEL.2002.1003208

Spl γ-radiation dosimeter using the optical and electrical properties of Al/S/CuPc/Al thin films

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