TY - GEN
T1 - Strain analysis of GaInAs/GaAs structures using TEM image simulation of 90°-wedges
AU - Harvey, A. J.
AU - Faux, D. A.
AU - Bangert, U.
AU - Charsley, P.
PY - 1991
Y1 - 1991
N2 - A new characterisation technique for the analysis of strain is presented. The method matches TEM images of thickness fringes from 90°-cleaved wedge samples with simulated TEM images obtained from theoretical calculations of the strain relaxation at the edge of the wedge. The technique is applied here to a GaInAs/GaAs strained single quantum well structure. The remarkable sensitivity of the thickness fringe contrast to the misfit strain, f, and the deviation parameter, s, is demonstrated.
AB - A new characterisation technique for the analysis of strain is presented. The method matches TEM images of thickness fringes from 90°-cleaved wedge samples with simulated TEM images obtained from theoretical calculations of the strain relaxation at the edge of the wedge. The technique is applied here to a GaInAs/GaAs strained single quantum well structure. The remarkable sensitivity of the thickness fringe contrast to the misfit strain, f, and the deviation parameter, s, is demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=0026360324&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0026360324
SN - 0854984062
T3 - Institute of Physics Conference Series
SP - 599
EP - 602
BT - Institute of Physics Conference Series
PB - Publ by Inst of Physics Publ Ltd
T2 - Proceedings of the Conference on Microscopy of Semiconducting Materials 1991
Y2 - 25 March 1991 through 28 March 1991
ER -