Abstract
A method is presented for absolute and spatially resolved strain determination in strained layer semiconductor heterostructures. In this method computer simulated and experimental electron microscope images of 90°-wedge specimens are compared. The tendency of the structures to assume lower than the alleged strain values and the appearance of asymmetries in the strain distribution in single strained layers will be discussed.
Original language | English |
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Pages (from-to) | 91-94 |
Number of pages | 4 |
Journal | Superlattices and Microstructures |
Volume | 9 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1991 |
Externally published | Yes |