Strain evaluation in III-V compound epitaxial layers

U. Bangert, P. Charsley, D. A. Faux, J. A. Harvey

Research output: Contribution to journalArticlepeer-review

Abstract

A method is presented for absolute and spatially resolved strain determination in strained layer semiconductor heterostructures. In this method computer simulated and experimental electron microscope images of 90°-wedge specimens are compared. The tendency of the structures to assume lower than the alleged strain values and the appearance of asymmetries in the strain distribution in single strained layers will be discussed.

Original languageEnglish
Pages (from-to)91-94
Number of pages4
JournalSuperlattices and Microstructures
Volume9
Issue number1
DOIs
Publication statusPublished - 1991
Externally publishedYes

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