Strain seeding of Ge quantum dots grown on Si (001)

In this paper, we report the use of buried dot layers as templates, which seed the dot formation in subsequent layers. We demonstrate that these buried layers can be used to cause premature dot formation in subsequent Ge growth, by straining the Si growth surface, without introducing any sample damage or impurities. In this way we are able to show a reduction in the line width of the PL spectra and control over the recombination energy.