TY - JOUR
T1 - Structural and compositional study of Erbium-doped silicon nanocrystals by HAADF, EELS and HRTEM techniques in an aberration corrected STEM
AU - Kashtiban, R. J.
AU - Bangert, U.
AU - Crowe, I.
AU - Halsall, P.
AU - Sherliker, B.
AU - Harvey, J.
AU - Eccles, J.
AU - Knights, A. P.
AU - Gwilliam, R.
AU - Gass, M.
PY - 2010
Y1 - 2010
N2 - Er-doped SiO2 and Si nano-crystals (NCs) embedded in a SiO 2 matrix were produced by ion beam implantation of Si (100) substrates. After annealing Er ions agglomerate in different positions with different compositional properties in samples with and without Si implants. HAADF and EELS show that in the sample with Si implants the Si and Er distribution is identical and within a band of ∼110nm width ∼75nm below theSiO2 surface whereas in the sample with no excess Si, Er forms on average much larger, amorphous aggregates, presumably an Er-oxide, in the SiO2 matrix with tendency to move towards the surface of the SiO 2 layer.
AB - Er-doped SiO2 and Si nano-crystals (NCs) embedded in a SiO 2 matrix were produced by ion beam implantation of Si (100) substrates. After annealing Er ions agglomerate in different positions with different compositional properties in samples with and without Si implants. HAADF and EELS show that in the sample with Si implants the Si and Er distribution is identical and within a band of ∼110nm width ∼75nm below theSiO2 surface whereas in the sample with no excess Si, Er forms on average much larger, amorphous aggregates, presumably an Er-oxide, in the SiO2 matrix with tendency to move towards the surface of the SiO 2 layer.
UR - http://www.scopus.com/inward/record.url?scp=77950502056&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/209/1/012043
DO - 10.1088/1742-6596/209/1/012043
M3 - Article
AN - SCOPUS:77950502056
SN - 1742-6588
VL - 209
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
M1 - 012043
ER -