Structural study of Si1 - xGex nanocrystals embedded in SiO2 films

S. R.C. Pinto; R. J. Kashtiban; A. G. Rolo; M. Buljan; A. Chahboun; U. Bangert; N. P. Barradas; E. Alves; M. J.M. Gomes

doi:10.1016/j.tsf.2009.09.148

Structural study of Si_{1 - x}Ge_x nanocrystals embedded in SiO₂ films

S. R.C. Pinto, R. J. Kashtiban, A. G. Rolo, M. Buljan, A. Chahboun, U. Bangert, N. P. Barradas, E. Alves, M. J.M. Gomes

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Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated the structural properties of Si_{1 - x}Ge_x nanocrystals formed in an amorphous SiO₂ matrix by magnetron sputtering deposition. The influence of deposition parameters on nanocrystal size, shape, arrangement and internal structure was examined by X-ray diffraction, Raman spectroscopy, grazing incidence small angle X-ray scattering, and high resolution transmission electron microscopy. We found conditions for the formation of spherical Si_{1 - x}Ge_x nanocrystals with average sizes between 3 and 13 nm, uniformly distributed in the matrix. In addition we have shown the influence of deposition parameters on average nanocrystal size and Ge content x.

Original language	English
Pages (from-to)	2569-2572
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	9
DOIs	https://doi.org/10.1016/j.tsf.2009.09.148
Publication status	Published - 26 Feb 2010

Keywords

Flash memory
GISAXS
HRTEM
Nanocrystals
Raman
Semiconductor
SiGe
SiO

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10.1016/j.tsf.2009.09.148

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title = "Structural study of Si1 - xGex nanocrystals embedded in SiO2 films",

abstract = "We have investigated the structural properties of Si1 - xGex nanocrystals formed in an amorphous SiO2 matrix by magnetron sputtering deposition. The influence of deposition parameters on nanocrystal size, shape, arrangement and internal structure was examined by X-ray diffraction, Raman spectroscopy, grazing incidence small angle X-ray scattering, and high resolution transmission electron microscopy. We found conditions for the formation of spherical Si1 - xGex nanocrystals with average sizes between 3 and 13 nm, uniformly distributed in the matrix. In addition we have shown the influence of deposition parameters on average nanocrystal size and Ge content x.",

keywords = "Flash memory, GISAXS, HRTEM, Nanocrystals, Raman, Semiconductor, SiGe, SiO",

author = "Pinto, {S. R.C.} and Kashtiban, {R. J.} and Rolo, {A. G.} and M. Buljan and A. Chahboun and U. Bangert and Barradas, {N. P.} and E. Alves and Gomes, {M. J.M.}",

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doi = "10.1016/j.tsf.2009.09.148",

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T1 - Structural study of Si1 - xGex nanocrystals embedded in SiO2 films

AU - Pinto, S. R.C.

AU - Kashtiban, R. J.

AU - Rolo, A. G.

AU - Buljan, M.

AU - Chahboun, A.

AU - Bangert, U.

AU - Barradas, N. P.

AU - Alves, E.

AU - Gomes, M. J.M.

PY - 2010/2/26

Y1 - 2010/2/26

N2 - We have investigated the structural properties of Si1 - xGex nanocrystals formed in an amorphous SiO2 matrix by magnetron sputtering deposition. The influence of deposition parameters on nanocrystal size, shape, arrangement and internal structure was examined by X-ray diffraction, Raman spectroscopy, grazing incidence small angle X-ray scattering, and high resolution transmission electron microscopy. We found conditions for the formation of spherical Si1 - xGex nanocrystals with average sizes between 3 and 13 nm, uniformly distributed in the matrix. In addition we have shown the influence of deposition parameters on average nanocrystal size and Ge content x.

AB - We have investigated the structural properties of Si1 - xGex nanocrystals formed in an amorphous SiO2 matrix by magnetron sputtering deposition. The influence of deposition parameters on nanocrystal size, shape, arrangement and internal structure was examined by X-ray diffraction, Raman spectroscopy, grazing incidence small angle X-ray scattering, and high resolution transmission electron microscopy. We found conditions for the formation of spherical Si1 - xGex nanocrystals with average sizes between 3 and 13 nm, uniformly distributed in the matrix. In addition we have shown the influence of deposition parameters on average nanocrystal size and Ge content x.

KW - Flash memory

KW - GISAXS

KW - HRTEM

KW - Nanocrystals

KW - Raman

KW - Semiconductor

KW - SiGe

KW - SiO

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DO - 10.1016/j.tsf.2009.09.148

M3 - Article

AN - SCOPUS:76249108880

SN - 0040-6090

VL - 518

SP - 2569

EP - 2572

JO - Thin Solid Films

JF - Thin Solid Films

IS - 9

ER -

Structural study of Si_{1 - x}Ge_x nanocrystals embedded in SiO₂ films

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Keywords

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