Studies of the Microstructure in Degraded Buried Heterostructure GaInAsP/InP Laser Diodes and Its Relation with the Lasing Threshold Current

U. Bangert; A. J. Harvey; A. R. Goodwin; A. T.R. Briggs

doi:10.1002/pssa.2211370208

Studies of the Microstructure in Degraded Buried Heterostructure GaInAsP/InP Laser Diodes and Its Relation with the Lasing Threshold Current

U. Bangert, A. J. Harvey, A. R. Goodwin, A. T.R. Briggs

Research output: Contribution to journal › Article › peer-review

Abstract

The microstructure of degraded GaInAsP/InP buried heterostructure laser diodes with low and high zinc‐doping levels of the p‐InP confining layer is investigated and correlated with the threshold current versus time curves. Dislocations, which were present before overstress life tests, initiate the degradation, whereas the microstructural characteristics and the degradation speed are controlled by the type of point defect initially present in the two kinds of laser diodes. These appear to be predominantly group‐III vacancies and group‐V interstitials in lasers with low zinc, and zinc interstitials and related defects in lasers with high zinc contents.

Original language	English
Pages (from-to)	351-362
Number of pages	12
Journal	physica status solidi (a)
Volume	137
Issue number	2
DOIs	https://doi.org/10.1002/pssa.2211370208
Publication status	Published - 16 Jun 1993
Externally published	Yes

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@article{172122f2fcbf48fd954e97d5c619353f,

title = "Studies of the Microstructure in Degraded Buried Heterostructure GaInAsP/InP Laser Diodes and Its Relation with the Lasing Threshold Current",

abstract = "The microstructure of degraded GaInAsP/InP buried heterostructure laser diodes with low and high zinc‐doping levels of the p‐InP confining layer is investigated and correlated with the threshold current versus time curves. Dislocations, which were present before overstress life tests, initiate the degradation, whereas the microstructural characteristics and the degradation speed are controlled by the type of point defect initially present in the two kinds of laser diodes. These appear to be predominantly group‐III vacancies and group‐V interstitials in lasers with low zinc, and zinc interstitials and related defects in lasers with high zinc contents.",

author = "U. Bangert and Harvey, {A. J.} and Goodwin, {A. R.} and Briggs, {A. T.R.}",

year = "1993",

month = jun,

day = "16",

doi = "10.1002/pssa.2211370208",

language = "English",

volume = "137",

pages = "351--362",

journal = "physica status solidi (a)",

issn = "0031-8965",

number = "2",

}

TY - JOUR

T1 - Studies of the Microstructure in Degraded Buried Heterostructure GaInAsP/InP Laser Diodes and Its Relation with the Lasing Threshold Current

AU - Bangert, U.

AU - Harvey, A. J.

AU - Goodwin, A. R.

AU - Briggs, A. T.R.

PY - 1993/6/16

Y1 - 1993/6/16

N2 - The microstructure of degraded GaInAsP/InP buried heterostructure laser diodes with low and high zinc‐doping levels of the p‐InP confining layer is investigated and correlated with the threshold current versus time curves. Dislocations, which were present before overstress life tests, initiate the degradation, whereas the microstructural characteristics and the degradation speed are controlled by the type of point defect initially present in the two kinds of laser diodes. These appear to be predominantly group‐III vacancies and group‐V interstitials in lasers with low zinc, and zinc interstitials and related defects in lasers with high zinc contents.

AB - The microstructure of degraded GaInAsP/InP buried heterostructure laser diodes with low and high zinc‐doping levels of the p‐InP confining layer is investigated and correlated with the threshold current versus time curves. Dislocations, which were present before overstress life tests, initiate the degradation, whereas the microstructural characteristics and the degradation speed are controlled by the type of point defect initially present in the two kinds of laser diodes. These appear to be predominantly group‐III vacancies and group‐V interstitials in lasers with low zinc, and zinc interstitials and related defects in lasers with high zinc contents.

UR - http://www.scopus.com/inward/record.url?scp=11644311968&partnerID=8YFLogxK

U2 - 10.1002/pssa.2211370208

DO - 10.1002/pssa.2211370208

M3 - Article

AN - SCOPUS:11644311968

SN - 0031-8965

VL - 137

SP - 351

EP - 362

JO - physica status solidi (a)

JF - physica status solidi (a)

IS - 2

ER -

Studies of the Microstructure in Degraded Buried Heterostructure GaInAsP/InP Laser Diodes and Its Relation with the Lasing Threshold Current

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