TY - JOUR
T1 - Study of erbium-doped silicon nanocrystals in silica
AU - Kashtiban, R. J.
AU - Bangert, U.
AU - Crowe, I. F.
AU - Halsall, M.
AU - Harvey, A. J.
AU - Gass, M.
N1 - Publisher Copyright:
© 2010 Published under licence by IOP Publishing Ltd.
PY - 2010/8/9
Y1 - 2010/8/9
N2 - Er-doped SiO2 and Er-doped Si-NCs embedded in a SiO2 matrix were produced by Er and/or Si ion beam implantation of a Si (100) substrate. The composition and distribution of implanted Er varies in samples either with or without Si implants. HAADF and EELS detail in samples with Si implants, the Si and Er distribution is identical, and within a band of ∼110 nm width at ∼75 nm below the SiO2 surface. Intense PL emission at 1.54 μm confirms formation of ErSi2, for the majority of aggregates, is unlikely. The present investigation details most Si-NCs are surrounded by Er2O3, or possess this phase within.
AB - Er-doped SiO2 and Er-doped Si-NCs embedded in a SiO2 matrix were produced by Er and/or Si ion beam implantation of a Si (100) substrate. The composition and distribution of implanted Er varies in samples either with or without Si implants. HAADF and EELS detail in samples with Si implants, the Si and Er distribution is identical, and within a band of ∼110 nm width at ∼75 nm below the SiO2 surface. Intense PL emission at 1.54 μm confirms formation of ErSi2, for the majority of aggregates, is unlikely. The present investigation details most Si-NCs are surrounded by Er2O3, or possess this phase within.
UR - http://www.scopus.com/inward/record.url?scp=85009286364&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/241/1/012097
DO - 10.1088/1742-6596/241/1/012097
M3 - Conference article
AN - SCOPUS:85009286364
SN - 1742-6588
VL - 241
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - 1
M1 - 012097
T2 - Electron Microscopy and Analysis Group Conference,EMAG 2009
Y2 - 8 September 2009 through 11 September 2009
ER -