Study of erbium-doped silicon nanocrystals in silica

R. J. Kashtiban; U. Bangert; I. F. Crowe; M. Halsall; A. J. Harvey; M. Gass

doi:10.1088/1742-6596/241/1/012097

Study of erbium-doped silicon nanocrystals in silica

R. J. Kashtiban
, U. Bangert
, I. F. Crowe
, M. Halsall
, A. J. Harvey
, M. Gass

University of Manchester
STFC Daresbury Laboratory

Research output: Contribution to journal › Conference article › peer-review

Abstract

Er-doped SiO₂ and Er-doped Si-NCs embedded in a SiO₂ matrix were produced by Er and/or Si ion beam implantation of a Si (100) substrate. The composition and distribution of implanted Er varies in samples either with or without Si implants. HAADF and EELS detail in samples with Si implants, the Si and Er distribution is identical, and within a band of ∼110 nm width at ∼75 nm below the SiO₂ surface. Intense PL emission at 1.54 μm confirms formation of ErSi₂, for the majority of aggregates, is unlikely. The present investigation details most Si-NCs are surrounded by Er₂O₃, or possess this phase within.

Original language	English
Article number	012097
Journal	Journal of Physics: Conference Series
Volume	241
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/241/1/012097
Publication status	Published - 9 Aug 2010
Externally published	Yes
Event	Electron Microscopy and Analysis Group Conference,EMAG 2009 - Sheffield, United Kingdom Duration: 8 Sep 2009 → 11 Sep 2009

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10.1088/1742-6596/241/1/012097

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title = "Study of erbium-doped silicon nanocrystals in silica",

abstract = "Er-doped SiO2 and Er-doped Si-NCs embedded in a SiO2 matrix were produced by Er and/or Si ion beam implantation of a Si (100) substrate. The composition and distribution of implanted Er varies in samples either with or without Si implants. HAADF and EELS detail in samples with Si implants, the Si and Er distribution is identical, and within a band of ∼110 nm width at ∼75 nm below the SiO2 surface. Intense PL emission at 1.54 μm confirms formation of ErSi2, for the majority of aggregates, is unlikely. The present investigation details most Si-NCs are surrounded by Er2O3, or possess this phase within.",

author = "Kashtiban, \{R. J.\} and U. Bangert and Crowe, \{I. F.\} and M. Halsall and Harvey, \{A. J.\} and M. Gass",

note = "Publisher Copyright: {\textcopyright} 2010 Published under licence by IOP Publishing Ltd.; Electron Microscopy and Analysis Group Conference,EMAG 2009 ; Conference date: 08-09-2009 Through 11-09-2009",

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doi = "10.1088/1742-6596/241/1/012097",

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TY - JOUR

T1 - Study of erbium-doped silicon nanocrystals in silica

AU - Kashtiban, R. J.

AU - Bangert, U.

AU - Crowe, I. F.

AU - Halsall, M.

AU - Harvey, A. J.

AU - Gass, M.

PY - 2010/8/9

Y1 - 2010/8/9

N2 - Er-doped SiO2 and Er-doped Si-NCs embedded in a SiO2 matrix were produced by Er and/or Si ion beam implantation of a Si (100) substrate. The composition and distribution of implanted Er varies in samples either with or without Si implants. HAADF and EELS detail in samples with Si implants, the Si and Er distribution is identical, and within a band of ∼110 nm width at ∼75 nm below the SiO2 surface. Intense PL emission at 1.54 μm confirms formation of ErSi2, for the majority of aggregates, is unlikely. The present investigation details most Si-NCs are surrounded by Er2O3, or possess this phase within.

AB - Er-doped SiO2 and Er-doped Si-NCs embedded in a SiO2 matrix were produced by Er and/or Si ion beam implantation of a Si (100) substrate. The composition and distribution of implanted Er varies in samples either with or without Si implants. HAADF and EELS detail in samples with Si implants, the Si and Er distribution is identical, and within a band of ∼110 nm width at ∼75 nm below the SiO2 surface. Intense PL emission at 1.54 μm confirms formation of ErSi2, for the majority of aggregates, is unlikely. The present investigation details most Si-NCs are surrounded by Er2O3, or possess this phase within.

UR - https://www.scopus.com/pages/publications/85009286364

U2 - 10.1088/1742-6596/241/1/012097

DO - 10.1088/1742-6596/241/1/012097

M3 - Conference article

AN - SCOPUS:85009286364

SN - 1742-6588

VL - 241

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012097

T2 - Electron Microscopy and Analysis Group Conference,EMAG 2009

Y2 - 8 September 2009 through 11 September 2009

ER -

Study of erbium-doped silicon nanocrystals in silica

Abstract

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