Superconductivity in nitrogen-doped 3C-SiC from first-principles calculations

Ning Liu, Wenjun Wang, Liwei Guo, Tonghua Peng, Xiaolong Chen

Research output: Contribution to journalArticlepeer-review

Abstract

The electronic structure and the lattice dynamics of N-doped 3C-SiC have been studied using the first-principles calculations. Electrons are introduced to the conduction band bottom at the X-point of the Brillouin zone. It is revealed that the acoustical modes and optical modes soften upon N doping. The softened acoustical modes contribute over twice of what the optical modes do to the electron-phonon coupling strength. We predict that the superconductivity will occur with N doping concentration beyond about 3 at.% and the transition temperature can reach 11.36 K upon doping of N at about 5 at.% for 3C-SiC.

Original languageEnglish
Article number1750116
JournalModern Physics Letters B
Volume31
Issue number12
DOIs
Publication statusPublished - 30 Apr 2017
Externally publishedYes

Keywords

  • electron-phonon coupling
  • N-doped SiC
  • superconductivity

Fingerprint

Dive into the research topics of 'Superconductivity in nitrogen-doped 3C-SiC from first-principles calculations'. Together they form a unique fingerprint.

Cite this