Suppression of wavy growth in metalorganic vapor phase epitaxy grown GalnAs/InP superlattices

U. Bangert; A. J. Harvey; C. Dieker; H. Hardtdegen

doi:10.1063/1.116893

Suppression of wavy growth in metalorganic vapor phase epitaxy grown GalnAs/InP superlattices

U. Bangert
, A. J. Harvey
, C. Dieker
, H. Hardtdegen

University of Manchester
Jülich Research Centre

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of growth temperature, V-III partial pressure ratio in the gas phase, and the nature of the carrier gas on the morphology of lattice matched InGaAs/InP multiple quantum well stacks are investigated. Preliminary results of an extension of this study to strained InGaAs/InP systems are presented.

Original language	English
Pages (from-to)	2101-2103
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	14
DOIs	https://doi.org/10.1063/1.116893
Publication status	Published - 30 Sept 1996
Externally published	Yes

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title = "Suppression of wavy growth in metalorganic vapor phase epitaxy grown GalnAs/InP superlattices",

abstract = "The effects of growth temperature, V-III partial pressure ratio in the gas phase, and the nature of the carrier gas on the morphology of lattice matched InGaAs/InP multiple quantum well stacks are investigated. Preliminary results of an extension of this study to strained InGaAs/InP systems are presented.",

author = "U. Bangert and Harvey, \{A. J.\} and C. Dieker and H. Hardtdegen",

year = "1996",

month = sep,

day = "30",

doi = "10.1063/1.116893",

language = "English",

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journal = "Applied Physics Letters",

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T1 - Suppression of wavy growth in metalorganic vapor phase epitaxy grown GalnAs/InP superlattices

AU - Bangert, U.

AU - Harvey, A. J.

AU - Dieker, C.

AU - Hardtdegen, H.

PY - 1996/9/30

Y1 - 1996/9/30

N2 - The effects of growth temperature, V-III partial pressure ratio in the gas phase, and the nature of the carrier gas on the morphology of lattice matched InGaAs/InP multiple quantum well stacks are investigated. Preliminary results of an extension of this study to strained InGaAs/InP systems are presented.

AB - The effects of growth temperature, V-III partial pressure ratio in the gas phase, and the nature of the carrier gas on the morphology of lattice matched InGaAs/InP multiple quantum well stacks are investigated. Preliminary results of an extension of this study to strained InGaAs/InP systems are presented.

UR - https://www.scopus.com/pages/publications/0038386815

U2 - 10.1063/1.116893

DO - 10.1063/1.116893

M3 - Article

AN - SCOPUS:0038386815

SN - 0003-6951

VL - 69

SP - 2101

EP - 2103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Suppression of wavy growth in metalorganic vapor phase epitaxy grown GalnAs/InP superlattices

Abstract

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