Abstract
Crossections of MOCVD grown GaAs/GaAlAs double heterojunction structures are investigated by TEM. The substrate/epilayer interface is found to be the main source for defects such as stacking fault 'pyramids', dislocations and dislocation loops. Possible causes for the defect formation, namely contamination of the substrate, excess A L-SCRIPT and lattice mismatch are discussed.
| Original language | English |
|---|---|
| Title of host publication | Institute of Physics Conference Series |
| Pages | 283-288 |
| Number of pages | 6 |
| Edition | 76 |
| Publication status | Published - 1985 |
| Externally published | Yes |
Publication series
| Name | Institute of Physics Conference Series |
|---|---|
| Number | 76 |
| ISSN (Print) | 0373-0751 |