Temperature and strain dependence of the roughening transition in III-V semiconductor and SiGe epitaxial growth

Material Science

• Epitaxy 100%
• III-V Semiconductor 100%
• Roughening Transition 100%
• Nucleation 50%
• Monolayers 50%
• Ternary Alloy 50%
• Dislocation (Crystal) 50%

Engineering

• Strain Energy 100%
• III-V Semiconductor 100%
• Two Dimensional 33%
• Dependent Strain 33%
• Classical Nucleation Theory 33%
• Growth Temperature 33%
• Ternary Alloy 33%
• Low Growth Temperature 33%
• Misfit Dislocation Formation 33%
• Calorific Value 33%
• Monolayers 33%