Thermal behaviour of aluminium films grown by molecular beam epitaxy on GaAs

U. Bangert; B. Tang; M. Missous

doi:10.1016/0022-0248(95)00194-8

Thermal behaviour of aluminium films grown by molecular beam epitaxy on GaAs

U. Bangert, B. Tang, M. Missous

University of Manchester

Research output: Contribution to journal › Article › peer-review

Abstract

The morphology and re-crystallisation behaviour of thick molecular beam epitaxial as-grown and thermally annealed Al films on (100) GaAs is reported. The re-crystallisation of (110) Al phases to (100) Al proceeds vertically and substrate driven with simultanuous formation of sphalerite phases in the (100) Al, giving the overall appearance of an interdiffused layer of 60-100 Å.

Original language	English
Pages (from-to)	223-230
Number of pages	8
Journal	Journal of Crystal Growth
Volume	154
Issue number	3-4
DOIs	https://doi.org/10.1016/0022-0248(95)00194-8
Publication status	Published - 2 Sep 1995
Externally published	Yes

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@article{31798c2f9d074406a1bb5403e03970ed,

title = "Thermal behaviour of aluminium films grown by molecular beam epitaxy on GaAs",

abstract = "The morphology and re-crystallisation behaviour of thick molecular beam epitaxial as-grown and thermally annealed Al films on (100) GaAs is reported. The re-crystallisation of (110) Al phases to (100) Al proceeds vertically and substrate driven with simultanuous formation of sphalerite phases in the (100) Al, giving the overall appearance of an interdiffused layer of 60-100 {\AA}.",

author = "U. Bangert and B. Tang and M. Missous",

year = "1995",

month = sep,

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doi = "10.1016/0022-0248(95)00194-8",

language = "English",

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journal = "Journal of Crystal Growth",

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AU - Bangert, U.

AU - Tang, B.

AU - Missous, M.

PY - 1995/9/2

Y1 - 1995/9/2

N2 - The morphology and re-crystallisation behaviour of thick molecular beam epitaxial as-grown and thermally annealed Al films on (100) GaAs is reported. The re-crystallisation of (110) Al phases to (100) Al proceeds vertically and substrate driven with simultanuous formation of sphalerite phases in the (100) Al, giving the overall appearance of an interdiffused layer of 60-100 Å.

AB - The morphology and re-crystallisation behaviour of thick molecular beam epitaxial as-grown and thermally annealed Al films on (100) GaAs is reported. The re-crystallisation of (110) Al phases to (100) Al proceeds vertically and substrate driven with simultanuous formation of sphalerite phases in the (100) Al, giving the overall appearance of an interdiffused layer of 60-100 Å.

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U2 - 10.1016/0022-0248(95)00194-8

DO - 10.1016/0022-0248(95)00194-8

M3 - Article

AN - SCOPUS:0029633181

SN - 0022-0248

VL - 154

SP - 223

EP - 230

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Thermal behaviour of aluminium films grown by molecular beam epitaxy on GaAs

Abstract

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