Abstract
A simulation program has been set up, which calculates the x-ray profiles of x-ray line scans taken across features of arbitrary structural and compositional geometries embedded in a matrix. The simulated scan intensities are compared to experimental scan intensities, obtained in an analytical scanning transmission electron microscope. The program is applied to calculate x-ray profiles of InAs quantum dots embedded in GaAs and to SiGe quantum dots embedded in Si in a thin foil in cross-sectional [011] projection. With the help of simulations of the indium L line scan intensities for the case of the InAs dots it is demonstrated how sensitively the x-ray profiles depend on the position of the dot in the thin foil. For the case of the SiGe dots, a full quantitative composition analysis is carried out by adjusting the model geometry and model composition distribution until the best match with the experimental germanium K line scan intensity profile is achieved.
Original language | English |
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Pages (from-to) | 636-644 |
Number of pages | 9 |
Journal | Journal of Physics D: Applied Physics |
Volume | 34 |
Issue number | 4 |
DOIs | |
Publication status | Published - 21 Feb 2001 |
Externally published | Yes |