Wide-band steady-state numerical model and parameter extraction of a tensile-strained bulk semiconductor optical amplifier

Michael J. Connelly

doi:10.1109/JQE.2006.885205

Wide-band steady-state numerical model and parameter extraction of a tensile-strained bulk semiconductor optical amplifier

Michael J. Connelly

Department of Electronics & Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A wide-band steady-state model of a tensile-strained bulk InGaAsP semiconductor optical amplifier is described. An efficient numerical algorithm of the steady-state model and a parameter extraction algorithm based on the Levenberg-Marquardt method are described. The parameter extraction technique is used to determine the material Auger recombination coefficient, effective intraband lifetime, the average strain and molar fraction of Arsenic in the active region. Simulations and comparisons with experiment are given which demonstrate the accuracy and versatility of the model.

Original language	English
Pages (from-to)	47-56
Number of pages	10
Journal	IEEE Journal of Quantum Electronics
Volume	43
Issue number	1
DOIs	https://doi.org/10.1109/JQE.2006.885205
Publication status	Published - Jan 2007

Keywords

Modeling
Parameter extraction
Semiconductor optical amplifier
Tensile-strained bulk material

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10.1109/JQE.2006.885205

Cite this

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title = "Wide-band steady-state numerical model and parameter extraction of a tensile-strained bulk semiconductor optical amplifier",

abstract = "A wide-band steady-state model of a tensile-strained bulk InGaAsP semiconductor optical amplifier is described. An efficient numerical algorithm of the steady-state model and a parameter extraction algorithm based on the Levenberg-Marquardt method are described. The parameter extraction technique is used to determine the material Auger recombination coefficient, effective intraband lifetime, the average strain and molar fraction of Arsenic in the active region. Simulations and comparisons with experiment are given which demonstrate the accuracy and versatility of the model.",

keywords = "Modeling, Parameter extraction, Semiconductor optical amplifier, Tensile-strained bulk material",

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year = "2007",

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AB - A wide-band steady-state model of a tensile-strained bulk InGaAsP semiconductor optical amplifier is described. An efficient numerical algorithm of the steady-state model and a parameter extraction algorithm based on the Levenberg-Marquardt method are described. The parameter extraction technique is used to determine the material Auger recombination coefficient, effective intraband lifetime, the average strain and molar fraction of Arsenic in the active region. Simulations and comparisons with experiment are given which demonstrate the accuracy and versatility of the model.

KW - Modeling

KW - Parameter extraction

KW - Semiconductor optical amplifier

KW - Tensile-strained bulk material

UR - https://www.scopus.com/pages/publications/33846090991

U2 - 10.1109/JQE.2006.885205

DO - 10.1109/JQE.2006.885205

M3 - Article

AN - SCOPUS:33846090991

SN - 0018-9197

VL - 43

SP - 47

EP - 56

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 1

ER -

Wide-band steady-state numerical model and parameter extraction of a tensile-strained bulk semiconductor optical amplifier

Abstract

Keywords

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