Abstract
A wideband dynamic numerical model of a tapered buried ridge stripe semiconductor optical amplifier is described. The model is based on a carrier density rate equation and a set of travelling-wave equations describing the amplified signal fields and spontaneous emission photon rates. These equations are solved in time and space using a computationally efficient numerical algorithm. The model is used to predict the switching properties of an optical gate. A simple equivalent circuit model of the gate, including package parasitics, is derived that can be used in conventional electrical circuit simulation tools.
| Original language | English |
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| Pages (from-to) | 173-178 |
| Number of pages | 6 |
| Journal | IEE Proceedings: Circuits, Devices and Systems |
| Volume | 149 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Jun 2002 |