Wideband model of a reflective tensile-strained bulk semiconductor optical amplifier

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Reflective semiconductor optical amplifiers (RSOAs) have shown promise for applications in WDM optical networks and in fiber ring mode-locked lasers. Polarization insensitive SOAs can be fabricated using tensile-strained bulk material and a rectangular cross section waveguide. The introduction of tensile strain can be used to compensate for the different confinement factors experienced by the waveguide TE and TM modes. There is a need for models that can be used to predict RSOA static characteristics such as the dependency of the signal gain on bias current and input optical power, the amplified spontaneous emission spectrum and noise figure. In this paper we extend our prior work on non-reflective SOAs to develop a static model that includes facet reflections. The model uses a detailed band structure description, which is used to determine the wavelength and carrier density dependency of the material gain and additive spontaneous emission. The model and includes a full geometrical description of the amplifier waveguide, including the input taper and the position dependency of the TE/TM confinement factors. The amplified signal and spontaneous emission are described by detailed travelling-wave equations and numerically solved in conjunction with a carrier density rate equation. The model uses material and geometric parameters for a commercially available RSOA. The versatility of the model is shown by several simulations that are used to predict the SOA operational characteristics as well as internal variables such as the amplified spontaneous emission and signal and the carrier density.

Original languageEnglish
Title of host publicationSemiconductor Lasers and Laser Dynamics VI
PublisherSPIE
ISBN (Print)9781628410822
DOIs
Publication statusPublished - 2014
EventSemiconductor Lasers and Laser Dynamics VI - Brussels, Belgium
Duration: 14 Apr 201417 Apr 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9134
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSemiconductor Lasers and Laser Dynamics VI
Country/TerritoryBelgium
CityBrussels
Period14/04/1417/04/14

Keywords

  • Amplified spontaneous emission
  • Modeling
  • Reflective semiconductor optical amplifier
  • Tensile-strain

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