Abstract
A wideband steady-state model and efficient numerical algorithm for a bulk InP-InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier is described. The model is applicable over a wide range of operating regimes. The relationship between spontaneous emission and material gain is clarified. Simulations and comparisons with experiment are given which demonstrate the versatility of the model.
Original language | English |
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Pages (from-to) | 439-447 |
Number of pages | 9 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 37 |
Issue number | 3 |
DOIs | |
Publication status | Published - Mar 2001 |
Keywords
- Modeling
- Semiconductor optical amplifier