Abstract
A wideband steady-state model and efficient numerical algorithm for a bulk InP-InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier is described. The model is applicable over a wide range of operating regimes. The relationship between spontaneous emission and material gain is clarified. Simulations and comparisons with experiment are given which demonstrate the versatility of the model.
| Original language | English |
|---|---|
| Pages (from-to) | 439-447 |
| Number of pages | 9 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 37 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Mar 2001 |
Keywords
- Modeling
- Semiconductor optical amplifier