Wideband Steady-State Model of a Strained InGaAsP MQW-SOA

Michael J. Connelly, Simone Mazzucato, Helene Carrere, Xavier Marie, Thierry Amand, Mohand Achouche, Christophe Caillaud, Romain Brenot

Research output: Contribution to journalArticlepeer-review

Abstract

A steady-state model of a strained MQW-SOA is described. Least-squares fitting of the model to experimental polarization resolved amplified spontaneous emission spectra is used to obtain difficult to measure model parameters such as the linebroadening lineshape parameters, Auger recombination, bandgap shrinkage, and intervalence band absorption coefficients. Well capture and escape processes are modeled by a carrier density dependent net escape time which accounts for barrier effects. Simulations and comparisons with experimental data are given which demonstrate the accuracy and versatility of the model.

Original languageEnglish
Article number7446268
Pages (from-to)2656-2662
Number of pages7
JournalJournal of Lightwave Technology
Volume34
Issue number11
DOIs
Publication statusPublished - 1 Jun 2016

Keywords

  • Modeling
  • quantum wells
  • semiconductor optical amplifier

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