TY - JOUR
T1 - Wideband steady-state numerical model of a tensile-strained bulk semiconductor optical amplifier
AU - Connelly, Michael J.
PY - 2006/9
Y1 - 2006/9
N2 - A wideband steady-state numerical model of a tensile-strained bulk InGaAsP semiconductor optical amplifier (SOA) is presented. The model is based on a set of travelling wave equations that govern the propagation of the amplified signal and spontaneous emission photon rates and a carrier density rate equation. The model is applicable over a wide range of operating regimes and can be used to determine the effects of varying the amplifier geometric and material parameters. Simulations and comparisons with experiment are given which demonstrate the versatility of the model.
AB - A wideband steady-state numerical model of a tensile-strained bulk InGaAsP semiconductor optical amplifier (SOA) is presented. The model is based on a set of travelling wave equations that govern the propagation of the amplified signal and spontaneous emission photon rates and a carrier density rate equation. The model is applicable over a wide range of operating regimes and can be used to determine the effects of varying the amplifier geometric and material parameters. Simulations and comparisons with experiment are given which demonstrate the versatility of the model.
KW - Modelling
KW - Semiconductor optical amplifier
KW - Spontaneous emission
UR - http://www.scopus.com/inward/record.url?scp=33947203197&partnerID=8YFLogxK
U2 - 10.1007/s11082-006-9045-5
DO - 10.1007/s11082-006-9045-5
M3 - Article
AN - SCOPUS:33947203197
SN - 0306-8919
VL - 38
SP - 1061
EP - 1068
JO - Optical and Quantum Electronics
JF - Optical and Quantum Electronics
IS - 12-14
ER -