Wideband steady-state numerical model of a tensile-strained bulk SOA

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A wideband steady-state numerical model of a tensile-strained bulk InP-InGaAsP semiconductor optical amplifier is presented. The model is applicable over a wide range of operating regimes. The model uses experimental measurements of the spontaneous emission spectra to extract pertinent model parameters such as the absorption loss, Auger recombination coefficients and effective intraband lifetime.

Original languageEnglish
Title of host publication2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Pages85-86
Number of pages2
DOIs
Publication statusPublished - 2006
Event2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 - Nanyang, Singapore
Duration: 11 Sep 200614 Sep 2006

Publication series

Name2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06

Conference

Conference2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Country/TerritorySingapore
CityNanyang
Period11/09/0614/09/06

Fingerprint

Dive into the research topics of 'Wideband steady-state numerical model of a tensile-strained bulk SOA'. Together they form a unique fingerprint.

Cite this