Wideband steady-state numerical model of a tensile-strained bulk semiconductor optical amplifier

Michael J. Connelly

doi:10.1117/12.585760

Wideband steady-state numerical model of a tensile-strained bulk semiconductor optical amplifier

Michael J. Connelly

Department of Electronics & Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

A wideband steady-state model and efficient numerical algorithm for a tensile-strained InP/InGaAsP semiconductor optical amplifier is described. The model is applicable over a wide range of operating regimes. The relationship between spontaneous emission and material gain is clarified. Simulations and comparisons with experiment are given which demonstrate the versatility of the model.

Original language	English
Article number	41
Pages (from-to)	351-361
Number of pages	11
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5722
DOIs	https://doi.org/10.1117/12.585760
Publication status	Published - 2005
Event	Physics and Simulation of Optoelectronics Devices XIII - San Jose, CA, United States Duration: 24 Jan 2005 → 27 Jan 2005

Keywords

Modeling
Semiconductor optical amplifier

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10.1117/12.585760

Cite this

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title = "Wideband steady-state numerical model of a tensile-strained bulk semiconductor optical amplifier",

abstract = "A wideband steady-state model and efficient numerical algorithm for a tensile-strained InP/InGaAsP semiconductor optical amplifier is described. The model is applicable over a wide range of operating regimes. The relationship between spontaneous emission and material gain is clarified. Simulations and comparisons with experiment are given which demonstrate the versatility of the model.",

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year = "2005",

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language = "English",

volume = "5722",

pages = "351--361",

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AU - Connelly, Michael J.

PY - 2005

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AB - A wideband steady-state model and efficient numerical algorithm for a tensile-strained InP/InGaAsP semiconductor optical amplifier is described. The model is applicable over a wide range of operating regimes. The relationship between spontaneous emission and material gain is clarified. Simulations and comparisons with experiment are given which demonstrate the versatility of the model.

KW - Modeling

KW - Semiconductor optical amplifier

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U2 - 10.1117/12.585760

DO - 10.1117/12.585760

M3 - Conference article

AN - SCOPUS:23744446758

SN - 0277-786X

VL - 5722

SP - 351

EP - 361

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 41

T2 - Physics and Simulation of Optoelectronics Devices XIII

Y2 - 24 January 2005 through 27 January 2005

ER -

Wideband steady-state numerical model of a tensile-strained bulk semiconductor optical amplifier

Abstract

Keywords

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